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الکترونیک نوری و کوانتومی 2013
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  • optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 1045
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     optical gain that could ultimately lead to light emission from silicon is a goal that has been pursued for a long time by the scientific community. the reason is that a silicon laser would allow for the development of low-cost, high-volume monolithic photonic integrated circuits created using conventional cmos technologies. however, the silicon indirect bandgap—requiring the participation of a proper phonon in the process of light emission—is a roadblock that has not been overcome so far. a high-q optical cavity allowing a very high density of states at the desired frequencies has been proposed as a possible way to get optical gain. however, recent theoretical studies have shown that the free-carrier absorption is much higher than the optical gain at ambient temperature in an indirect bandgap semiconductor, even if a high-q optical cavity is formed. in this work, we consider a particular case in which the semiconductor material is engineered to form an acousto-optical cavity where the photon and phonon modes involved in the emission process are simultaneously confined. the acousto-optical cavity confinement effect on the light emission properties is characterized by a compound purcell factor which includes both the optical as well as the acoustic purcell factor (apf). a theoretical expression for the apf is also introduced. our theoretical results suggest that creating an acousto-optical cavity the optical gain can overcome the photon loss due to free carriers as a consequence of the localization of phonons even at room temperature, paving the way towards the pursued silicon laser.

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