• cross-sectional study of macrodefects in mbe dual-band hgcdte on cdznte

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    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
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     hgcdte dual-band mid-wave infrared/long-wave infrared focal-plane arrays on cdznte are a key component in advanced electrooptic sensor applications. molecular beam epitaxy (mbe) has been used successfully for growth of dual-band layers on larger cdznte substrates. however, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on si substrate. this paper reports the macrodefect density versus size signature of a well-optimized mbe dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. the results show that the macrodefect originates from a void, which in turn is associated with a pit on the cdznte substrate.

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