• parameters of the constant-energy surface and features of charge carrier scattering of bi2te3-based epitaxial films

    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 801
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
    galvanomagnetic properties of epitaxial bi0.5sb1.5te3 films grown by the hot-wall technique were investigated in magnetic fields of h = 5 t to 14 t through the temperature interval of 10 k to 300 k. the results were analyzed in terms of a many-valley model of the energy spectrum and anisotropic charge carrier scattering. the degeneracy parameter β d, and ratios of components of the reciprocal effective-mass tensorand relaxation time tensorwere estimated. substantial anisotropy of charge carrier scattering was observed in the investigated temperature interval. anisotropy of charge carrier scattering along bisector axes is enhanced, as compared with that of corresponding bulk samples. high charge carrier mobility and higher angular factor of the temperature dependence of mobility promote enhancement of the figure of merit z of the films as compared with that of corresponding bulk solid solutions.

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