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نویسندگان مقالات پربازدید :
مجله مواد الکترونیکی 2013
جزئیات رویداد
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  • effect of temperature cycling on conduction mechanisms in cdte thin films

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 706
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     cdte thin films of 500 å thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. metal–insulator–metal (mim) capacitors were fabricated using these films as a dielectric. these films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 k). direct-current (dc) current–voltage (i–v) and capacitance–voltage (c–v) measurements were performed on these films. furthermore, the films were subjected to thermal cycling from 300 k to 80 k and back to 300 k. typical minimum leakage currents near zero bias at room temperature varied between 0.9 na and 0.1 μa, while low-temperature leakage currents were in the range of 9.5 pa to 0.5 na, corresponding to resistivity values on the order of 108 ω-cm and 1010 ω-cm, respectively. well-known conduction mechanisms from the literature were utilized for fitting of measured i–v data. our analysis indicates that the conduction mechanism in general is ohmic for low fields <5 × 104 v cm−1, while the conduction mechanism for fields >6 × 104 v cm−1 is modified poole–frenkel (mpf) and fowler–nordheim (fn) tunneling at room temperature. at 80 k, schottky-type conduction dominates. a significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.

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